2007. 5. 21 1/2 semiconductor technical data ktb1369 epitaxial planar pnp transistor revision no : 4 high voltage application tv, monitor vertical output application driver stage application coror tv class b sound output application features high breakdown voltage : v ceo =-180v(min.) high transition frequency : f t =100mhz(typ.) high current : i c(max) =-2a. complementary to ktd2061. maximum rating (ta=25 ) dim millimeters to-220is 0.76+0.09/-0.05 a b c d e f g 0.5+0.1/-0.05 h 1.2+0.25/-0.1 1.5+0.25/-0.1 j k l m n p q r f q 1 2 3 l p n b g j m d n h e r k l s 0.5 typ s d a c 2.70 0.3 + _ 12.0 0.3 + _ 13.6 0.5 + _ 3.7 0.2 + _ 3.2 0.2 + _ 10.0 0.3 + _ 15.0 0.3 + _ 3.0 0.3 + _ 4.5 0.2 + _ 2.54 0.1 + _ + 2.6 0.2 _ 6.8 0.1 + _ 1. base 2. collector 3. emitter electrical characteristics (ta=25 ) note : h fe classification o:70 140 , y:120 240 characteristic symbol rating unit collector-base voltage v cbo -200 v collector-emitter voltage v ceo -180 v emitter-base voltage v ebo -5 v collector current i c -2 a base current i b -0.2 a collector power dissipation (tc=25 ) p c 20 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-200v, i e =0 - - -1.0 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -1.0 a collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -180 - - v dc current gain h fe v ce =-10v, i c =-400ma 70 - 240 collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - - -1.0 v base-emitter voltage v be v ce =-5v, i c =-500ma - - -1.0 v transition frequency f t v ce =-10v, i c =-400ma - 100 - mhz
2007. 5. 21 2/2 ktb1369 revision no : 4 collecotr current i (a) 0 c 0 collector-emitter voltage v (v) ce ce c i - v collector power dissipation p (w) 0 c 0 case temperature ta ( c) pc - ta 10 dc current gain h fe -0.3 -0.1 -0.03 -0.01 collector current i (a) c h - i v ,v - i c collector current i (a) -0.01 -0.03 -0.1 -0.3 -0.01 be(sat) saturation voltage v ,v (v) -10 -20 -30 -40 -50 -0.2 -0.4 -0.6 -0.8 -1.0 i =-8ma b i =-7ma b i =-6ma b i =-5ma b i =-4ma b i =-3ma b i =-2ma b i =-1ma b fe c -1 -3 -10 30 50 100 300 500 1k v =-10v ce ce(sat) be(sat) c ce(sat) -1 -3 -10 -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 -10 v be(sat) ce(sat) v i =10i c b 50 100 150 10 20 30 40 safe operating area ce collector-emitter voltage v (v) -3 dc operation -5 -10 -30 -7 c -0.007 -0.01 -0.03 collector current i (a) -0.5 -50 -100 -300 -0.05 -0.1 -0.3 -1 -3 -5 * single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature i max(pulsed) c c i max (continuous) v max ceo 1 00 s* 1ms* 10ms* 100ms* tc=25 c
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